By Delma Myers
8 enjoyable and great designs designs made utilizing a flexible approach that takes crochet in a brand new path! Softcover, 24 pages, Full-color all through.
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Extra resources for Delma's Diagonal Stitch
Servalli, G. (2009), ‘A 45 nm generation phase change memory technology’, IEEE IEDM Tech. , pp. 1–4. 43. , Schippers, S. et al. 8 V phase-change memory’, Solid-State Circuits Conference, ISSCC, pp. 270–1. 44. , Odaka, T. and Tominaga, J. (2011), ‘Properties of lowpower phase-change device with GeTe/Sb2Te3 superlattice material’, EPCOS, p. 110. 45. , Tanaka, Y. et al. (2009), ‘Pipeshaped BiCS Flash memory with 16 stacked layers and multi-level-cell operation for ultra high density storage devices’, Symp.
If TSi ≤ Wd, Vt depends on total number of traps and becomes smaller as body thickness becomes thinner. 24 Schematic of ‘macaroni’ body BiCS cell. 25 Id-Vg characteristics with macaroni body and conventional vertical channel FET. dielectric film to make process integration easier. 25 shows the drain current–control gate voltage (Id-Vg) characteristics of the macaroni body vertical FET; the I-V characteristics are improved. 26 shows the simulated electric field across the vertical FET. The reduced body thickness enables better control of the channel potential by the gate electrode.
21 By using a thinner poly-Si body, the total number of traps can be reduced and the threshold voltage can be made less sensitive to trap density fluctuation; Fig. 23 provides an explanatory model. The structure of the ‘macaroni’ body vertical FET is shown in Fig. 24. Very thin poly-Si is deposited on the ONO layer. 22 Program and erase characteristics as a function of hole diameter. 23 Vt depending on Ntrap at poly- silicon grain boundaries: (a) TSi > Wd ; and (b) TSi < Wd. If TSi ≤ Wd, Vt depends on total number of traps and becomes smaller as body thickness becomes thinner.